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2SB556 Datasheet (2SB555 / 2SB556) SILICON POWER TRANSISTOR

Manufacturer: SavantIC

Overview: SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB555.

Download the 2SB556 datasheet PDF. This datasheet also includes the 2SB555 variant, as both parts are published together in a single manufacturer document.

Datasheet Details

Part number 2SB556
Manufacturer SavantIC
File Size 136.95 KB
Description (2SB555 / 2SB556) SILICON POWER TRANSISTOR
Download 2SB556 Download (PDF)

General Description

·With TO-3 package ·Complement to type 2SD425/426 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2SB555 VCBO Collector-base voltage 2SB556 2SB555 VCEO Collector-emitter voltage 2SB556 VEBO IC IE PC Tj Tstg Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -120 -5 -12 12 100 150 -65~150 V A A W Open emitter -120 -140 V CONDITIONS VALUE -140 V UNIT SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS 2SB555 2SB556 SYMBOL MIN TYP.

MAX UNIT 2SB555 V(BR)CEO Collector-emitter breakdown voltage 2SB556 IC=-0.1A ;IB=0 -140 V -120 V(BR)EBO Emitter-base breakdown voltage IE=-10mA ;IC=0 IC=-7A;

IB=-0.7A -5 V 2SB555 VCEsat Collector-emitter saturation voltage 2SB556 -3.0 IC=-6A;