2SB556 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS 2SB555 2SB556 SYMBOL MIN TYP. IB=-0.7A -5 V 2SB555 VCEsat Collector-emitter saturation voltage 2SB556 -3.0 IC=-6A; VCE=-5V 40 -2.5 V VBE ICBO IEBO hFE COB fT Base-emitter on voltage V Collector cut-off current -0.1 mA Emitter cut-off current -0.1 mA DC current gain 140 Output capacitance 330 pF...