• Part: 2SB552
  • Description: SILICON PNP TRANSISTOR
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 123.04 KB
Download 2SB552 Datasheet PDF
Toshiba
2SB552
FEATURES - High Collector Power Dissipation - High Collector Current : I C=-15A - High Voltage : VCEO=-180V - plementary to 2SD552. P C=150W (Tc=25°C) INDUSTRIAL APPLICATIONS Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation SYMBOL v CBO VCEO VEBO ic IB RATING -220 -5 -15 -3 UNIT 1. BASE 2. EMITTER COLLECTOR (CASE) Junction Temperature Storage Temperature Range Tj Tstt 150 -65^150 TOSHIBA TC-3, TB-3 2-21A1A ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current Collector-Emitter Breakdown Voltage l EBO V (BR) CEO DC Current Gain h FE(l) (Note) h FE(2) Collector-Emitter Saturation Voltage v...