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2SB554 - PNP Transistor

Key Features

  • High Power Dissipation.
  • High Breakdown Voltage : P c = 150W VcEO = -180V.
  • Complementary tc/2SD424.
  • Recommended for 100W High-Fiderity Audio Frequency Amplifier Output Stage.

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Datasheet Details

Part number 2SB554
Manufacturer Toshiba
File Size 89.48 KB
Description PNP Transistor
Datasheet download datasheet 2SB554 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm POWER AMPLIFIER APPLICATIONS, FEATURES • High Power Dissipation • High Breakdown Voltage : P c = 150W VcEO = -180V • Complementary tc/2SD424. • Recommended for 100W High-Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (T a?=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage SYMBOL v CBO v CF0 Emitter-Base Voltage Collector Current VE750 ic Emitter Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range If PC T-i Tstg RATING -180 -180 -5 -15 15 150 UNIT V V V A A W 15 °C -65 %150 °C 1. BASE Z. EMITTER COLLECTOR (CASE) TO-3 TOSHIBA TC-3, TB-3 2-21A1A Mounting Kit No. AC73 Weight : 12.