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2SB554 - PNP Transistor

General Description

High Power Dissipation- : PC= 150W@TC= 25℃ High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) Complement to Type 2SD424 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier ,DC-DC converter

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isc Silicon PNP Power Transistor DESCRIPTION ·High Power Dissipation- : PC= 150W@TC= 25℃ ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Complement to Type 2SD424 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier ,DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous 1.5 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB554 isc website：www.iscsemi.