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2SB553 - PNP Transistor

Datasheet Summary

Description

Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -4A Complement to Type 2SD553 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

High current switching applications.

Power amplifier applications.

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Datasheet Details

Part number 2SB553
Manufacturer INCHANGE
File Size 214.41 KB
Description PNP Transistor
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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -4A ·Complement to Type 2SD553 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications. ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -7 A 1.5 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB553 isc website：www.iscsemi.
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