Datasheet Details
| Part number | 2SB550 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.35 KB |
| Description | PNP Transistor |
| Datasheet | 2SB550-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB550.
| Part number | 2SB550 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.35 KB |
| Description | PNP Transistor |
| Datasheet | 2SB550-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -70V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@IC= -5A ·With TO-66 package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -70 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 5 A 25 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB550 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
RBE=∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB550 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB551 | PNP Transistor |
| 2SB552 | PNP Transistor |
| 2SB553 | PNP Transistor |
| 2SB554 | PNP Transistor |
| 2SB555 | PNP Transistor |
| 2SB556 | PNP Transistor |
| 2SB557 | PNP Transistor |
| 2SB558 | PNP Transistor |
| 2SB502 | PNP Transistor |
| 2SB503 | PNP Transistor |