2SB550
2SB550 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -70V(Min)
- Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max.)@IC= -5A
- With TO-66 package
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low frequency power amplifiers and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
VCEO
Collector-Emitter Voltage
-70
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
Collector Power Dissipation @TC=25℃
Junction Temperature
Tstg
Storage Temperature
℃
-55~150
℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor
INCHANGE...
