2SB550 Datasheet | SavantIC

DESCRIPTION - With TO-66 package - Low collector saturation voltage APPLICATIONS - For low frequency power amplification - For low speed and power switching PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -100 -70 -5 -5 25 150 -55~150 UNIT V V V A W Savant IC Semiconductor .. Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN SYMBOL TYP. UNIT V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO h FE f T Collector-base breakdown voltage IC=-1m A; IE=0 IC=-10m A; IB=0 IE=-1m A; IC=0 IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-0.1A ; VCE=-10V -100 Collector-emitter breakdown voltage -70 Emitter-base breakdown voltage -5 Collector-emitter saturation voltage -1.0 Base-emitter saturation voltage -1.5 Collector cut-off current -0.1 m A Emitter cut-off current -0.1 m A DC current...