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2SB552 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) High Power Dissipation- : PC= 150W(Max)@TC=25℃ Complement to Type 2SD552 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

High power amplifier applications.

High p

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isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·High Power Dissipation- : PC= 150W(Max)@TC=25℃ ·Complement to Type 2SD552 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplifier applications. ·High power switching applications. ·DC-DC converter and regulator applications.