2SB552 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SB552 SYMBOL TYP. MAX UNIT V(BR)CEO VCEsat VBEsat ICBO IEBO hFE COB fT Collector-emitter breakdown voltage IC=-25mA ;IB=0 IC=-10A; VCB=-10V;f=1.0MHz IC=-1A.