Datasheet Details
| Part number | 2SB554 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 136.53 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | 2SB554_SavantIC.pdf |
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Overview: SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors.
| Part number | 2SB554 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 136.53 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | 2SB554_SavantIC.pdf |
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·With TO-3 package ·Complement to type 2SD424 ·High power dissipation APPLICATIONS ·For use in power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -180 -180 -5 -15 -4 150 150 -55~200 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2SB554 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -180 V VCEsat Collector-emitter saturation voltage IC=-10A;
IB=-1A -3.0 V VBE Base-emitter on voltage IC=-2A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB554 | PNP Transistor | Toshiba |
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2SB554 | PNP Transistor | INCHANGE |
| Part Number | Description |
|---|---|
| 2SB550 | SILICON POWER TRANSISTOR |
| 2SB551 | SILICON POWER TRANSISTOR |
| 2SB552 | SILICON POWER TRANSISTOR |
| 2SB553 | SILICON POWER TRANSISTOR |
| 2SB555 | (2SB555 / 2SB556) SILICON POWER TRANSISTOR |
| 2SB556 | (2SB555 / 2SB556) SILICON POWER TRANSISTOR |
| 2SB557 | Silicon PNP Power Transistors |
| 2SB558 | Silicon PNP Power Transistors |
| 2SB506 | SILICON POWER TRANSISTOR |
| 2SB507 | Silicon PNP Power Transistors |