2SB554 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB554 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -180 V VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A -3.0 V VBE Base-emitter on voltage IC=-2A.