2SB553
2SB553 is SILICON POWER TRANSISTOR manufactured by SavantIC.
DESCRIPTION
- With TO-220C package
- plement to type 2SD553
- Low collector saturation voltage APPLICATIONS
- High current switching applications
- Power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -50~150 Open emitter Open base Open collector CONDITIONS VALUE -70 -50 -5 -7 1.5 W UNIT V V V A
Savant IC Semiconductor
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Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=-50m A; IB=0 IC=-4A; IB=-0.4A IC=-4A; IB=-0.4A VCB=-70V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-1V IC=-4A ; VCE=-1V IE=0 ; VCB=-10V; f=1MHz IC=-1A ; VCE=-4V 70 30 MIN -50
SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO h FE-1 h FE-2 COB f T
TYP.
UNIT V
-0.2 -0.9
-0.4 -1.2 -30 -50 240
V V µA µA
250 10 p F MHz
Switching times ton ts tf Turn-on time Storage time Fall time IB1=-IB2=-0.3A; VCC?-30V RL=10@ 0.2 2.5 0.5 µs µs µs h FE-1Classifications O 70-140 Y 120-240
Savant IC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
Savant IC...