2SB553
2SB553 is SILICON PNP TRANSISTOR manufactured by Toshiba.
FEATURES
- Low Collector Saturation Voltage : Vc E(sat)=-0.4V (Max.) at Ic=-4A
- plementray to 2SD553.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
SYMBOL
RATING UNIT
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
Collector Power Ta=25°C
Dissipation
Tc=25°C
Junction Temperature
Storage Temperature Range
VCBO VCEO v EBO ic
Tstg
-70 -50
-5
-7 1.5
40 150 -55^150
°C °C
1. BASE 2. COLLECTOR (HEAT SINK; 3. EMITTER
JEDEC EIAJ TOSHIBA
TO-220AB SC- 46 2- 10A1A
ELECTRICAL CHARACTERISTICS CHARACTERISITC
Collector Cut-off Current
Emitter Cut-off Current Collector-Emitter Breakdown Voltage
(Ta=25°0
Mounting Kit No. AC75 Weight : 1.9g
SYMBOL
TEST CONDITION
MIN. TYP. MAX.
L CB0
VCB=-70V, I E =0
-30
L EB0
VEB = -5V, I C =0
-50 v (BR)CE0 Ic=-50m...
