2SB553 Description
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 10.3 MAX.
2SB553 Key Features
- Low Collector Saturation Voltage : VcE(sat)=-0.4V (Max.) at Ic=-4A
- plementray to 2SD553
- 70 -50