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SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
INDUSTRIAL APPLICATIONS Unit in mm
10.3 MAX.
3.6 ±0.2
FEATURES • Low Collector Saturation Voltage : VcE(sat)=-0.4V (Max.) at Ic=-4A • Complementray to 2SD553.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
SYMBOL
RATING UNIT
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
Collector Power Ta=25°C
Dissipation
Tc=25°C
Junction Temperature
Storage Temperature Range
VCBO VCEO v EBO ic
Tstg
-70 -50
-5
-7 1.5
40 150 -55^150
V
°C °C
1. BASE 2. COLLECTOR (HEAT SINK; 3.
2SB553 Datasheet
