Datasheet Details
| Part number | 2SB624 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.40 KB |
| Description | PNP Transistor |
| Download | 2SB624 Download (PDF) |
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| Part number | 2SB624 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.40 KB |
| Description | PNP Transistor |
| Download | 2SB624 Download (PDF) |
|
|
|
·SOT-23 plastic-encapsulate transistors ·High DC current gain:hFE=200(TYP) @VCE = -1V, IC = -100mA ·Complementary to 2SD596 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency general purpose amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.7 A 0.2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= -30V;
IE= 0 IEBO Emitter Cutoff Current VEB= -5V;
IC= 0 hFE-1 DC Current Gain IC= -100mA ;
isc Silicon PNP Transistor INCHANGE Semiconductor 2SB624.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB624 | PNP Transistor | NEC |
 |
2SB624 | Silicon Transistor | GME |
 |
2SB624 | PNP Transistors | Kexin |
 |
2SB624 | SILICON PNP EPITAXIAL PLANAR TRANSISTOR | AiT Semiconductor |
 |
2SB624 | PNP Transistor | SeCoS |
| Part Number | Description |
|---|---|
| 2SB625 | PNP Transistor |
| 2SB626 | PNP Transistor |
| 2SB628 | PNP Transistor |
| 2SB600 | PNP Transistor |
| 2SB601 | PNP Transistor |
| 2SB604 | PNP Transistor |
| 2SB608 | PNP Transistor |
| 2SB609 | PNP Transistor |
| 2SB611 | Silicon PNP Power Transistor |
| 2SB612 | PNP Transistor |