| Part number | 2SB632 |
|---|---|
| Datasheet | 2SB632-INCHANGE.pdf |
| File Size | 184.02 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
|
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·High Collector Current-IC=-2.0A ·High Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB632 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -10μA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB632 | PNP/NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
 |
2SB632 | SILICON POWER TRANSISTOR | SavantIC |
|
2SB632K | PNP/NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
