Datasheet Details
| Part number | 2SB632 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 184.02 KB |
| Description | PNP Transistor |
| Datasheet |
 2SB632-INCHANGE.pdf
|
| Part number | 2SB632 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 184.02 KB |
| Description | PNP Transistor |
| Datasheet |
2SB632-INCHANGE.pdf
|
High Collector Current-IC=-2.0A High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-25V(Min) Good Linearity of hFE Complement to Type 2SD612 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low-frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -25 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Co
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