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2SB632 - PNP Transistor

General Description

High Collector Current-IC=-2.0A High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-25V(Min) Good Linearity of hFE Complement to Type 2SD612 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low-frequency power amplifier

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB632 DESCRIPTION ·High Collector Current-IC=-2.