| Part number | 2SB634 |
|---|---|
| Datasheet | 2SB634-INCHANGE.pdf |
| File Size | 208.54 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB634 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SB634 | SILICON POWER TRANSISTOR | SavantIC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SB630 | Silicon PNP Power Transistor |
| 2SB631 | PNP Transistor |
| 2SB631K | PNP Transistor |
| 2SB632 | PNP Transistor |
| 2SB633 | PNP Transistor |
| 2SB638 | PNP Transistor |
| 2SB600 | PNP Transistor |
| 2SB601 | PNP Transistor |
| 2SB604 | PNP Transistor |
| 2SB608 | PNP Transistor |
