2SB634 Overview
Description
With TO-3 package - High power dissipation APPLICATIONS - For low frequency power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -6 -7 60 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage CONDITIONS IC=-30mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-3A; IB=-0.3A VCB=-120V; IE=0 MIN -120 -120 -6 2SB634 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO TYP. MAX UNIT V V V -1.5 V Collector cut-off current -0.1 mA IEBO hFE fT Emitter cut-off current DC current gain Transition frequency VEB=-6V; IC=0 IC=-1A ; VCE=-5V IC=-1A ; VCE=-5V 40 15 -0.1 320 mA MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB634 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3.
