| Part Number | 2SB634 Datasheet |
|---|---|
| Manufacturer | SavantIC |
| Overview | ·With TO-3 package ·High power dissipation APPLICATIONS ·For low frequency power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol D. IE=0 IE=-1mA ;IC=0 IC=-3A; IB=-0.3A VCB=-120V; IE=0 MIN -120 -120 -6 2SB634 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO TYP. MAX UNIT V V V -1.5 V Collector cut-off current -0.1 mA IEBO hFE fT Emitter cut-off current DC current gain Transition frequency VEB=-6V; IC=0 IC=-1A ; VCE=-5V . |
2SB634 Datasheet and Specifications PDF
The 2SB634 is a SILICON POWER TRANSISTOR.
| Part Number | 2SB634 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low. 0mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -5V hFE-2 DC Current Gain . |