Datasheet Details
| Part number | 2SB634 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.54 KB |
| Description | PNP Transistor |
| Datasheet | 2SB634-INCHANGE.pdf |
|
|
Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB634 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.54 KB |
| Description | PNP Transistor |
| Datasheet | 2SB634-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB634 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB634 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB634 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB630 | Silicon PNP Power Transistor |
| 2SB631 | PNP Transistor |
| 2SB631K | PNP Transistor |
| 2SB632 | PNP Transistor |
| 2SB633 | PNP Transistor |
| 2SB638 | PNP Transistor |
| 2SB600 | PNP Transistor |
| 2SB601 | PNP Transistor |
| 2SB604 | PNP Transistor |
| 2SB608 | PNP Transistor |