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2SB633 - PNP Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -85V(Min) Complement to Type 2SD613 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Audio frequency 25~35 watts output applications.

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Datasheet Details

Part number 2SB633
Manufacturer INCHANGE
File Size 214.30 KB
Description PNP Transistor
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isc Silicon PNP Power Transistor 2SB633 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -85V(Min) ·Complement to Type 2SD613 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency 25~35 watts output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -85 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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