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2SB631K - PNP Transistor

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Description

High Collector Current-IC=-1.0A High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SD600K Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS P

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Datasheet Details

Part number 2SB631K
Manufacturer INCHANGE
File Size 209.01 KB
Description PNP Transistor
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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current-IC=-1.0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD600K ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -2 A 8 W 1 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB631K isc website:www.
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