| Part number | 2SB632 |
|---|---|
| Datasheet | 2SB632-INCHANGE.pdf |
| File Size | 184.02 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
|
|
·High Collector Current-IC=-2.0A ·High Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB632 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -10μA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SB632 | PNP/NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
 |
2SB632 | SILICON POWER TRANSISTOR | SavantIC |
|
2SB632K | PNP/NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
|
2SB632K | SILICON POWER TRANSISTOR | SavantIC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SB630 | Silicon PNP Power Transistor |
| 2SB631 | PNP Transistor |
| 2SB631K | PNP Transistor |
| 2SB633 | PNP Transistor |
| 2SB634 | PNP Transistor |
| 2SB638 | PNP Transistor |
| 2SB600 | PNP Transistor |
| 2SB601 | PNP Transistor |
| 2SB604 | PNP Transistor |
| 2SB608 | PNP Transistor |
