2SB632
2SB632 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Collector Current-IC=-2.0A
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=-25V(Min)
- Good Linearity of h FE
- plement to Type 2SD612
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Low-frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-25
VCEO
Collector-Emitter Voltage
-25
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-2
Collector Current-Pulse
Collector Power Dissipation
@ TC=25℃ PC
Collector Power Dissipation
@ Ta=25℃
Junction Temperature
Tstg
Storage Temperature...
