2SB632 Description
·High Collector Current-IC=-2.0A ·High Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB632 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -10μA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA.