2SB632 Datasheet
2SB632 Datasheet (SANYO)
SANYO
Ordering number:341G PNP/NPN Epitaxial Planar Silicon Transistor 2SB632, 632K/2SD612, 612K 25V/35V, 2A Low-Frequency Power Amplifier Applications Features · High collector dissipation and wide ASO. .
* High collector dissipation and wide ASO.
Package Dimensions
unit:mm 2009B
[2SB632, 632K/2SD612, 612K]
( ) : 2SB632, 632K
1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitt.
2SB632 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·High Collector Current-IC=-2.0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-25V(Min) ·Good Linearity of hFE ·Complement to Type 2SD612 ·Minimum Lot-to-Lot variations for robust device perf.
ETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -10μA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= -10μA ; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A VBE(sat) Base-Emitter Saturat.
2SB632 Datasheet (SavantIC)
SavantIC
·With TO-126 package ·Complement to type 2SD612/612K ·High collector dissipation ·Wide ASO(Safe Operating Area) APPLICATIONS ·25V/35V, 2A low-frequency power amplifier applications PINNING PIN 1 2 3 D.
2 IC=-10µA ;IE=0 2SB632K IE=-10µA ;IC=0 IC=-1.5A ;IB=-0.15A IC=-1.5A ;IB=-0.15A VCB=-20V; IE=0 VEB=-4V; IC=0 IC=-0.5A ; VCE=-2V IC=-1.5A ; VCE=-2V IC=-50mA ; VCE=-10V f=1MHz ; VCB=-10V CONDITIONS SYMBOL 2SB632 2SB632K MIN -25 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -35 -.