Datasheet Details
| Part number | 2SB638 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.11 KB |
| Description | PNP Transistor |
| Download | 2SB638 Download (PDF) |
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| Part number | 2SB638 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.11 KB |
| Description | PNP Transistor |
| Download | 2SB638 Download (PDF) |
|
|
|
·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE =1000 (Min) @ IC = -5A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO IC ICM Emitter-Base Voltage Collector Current -Continuous Collector Current-Peak -5 V -10 A -15 A IB Base Current -0.2 A PC Collector Power Dissipation@TC=25℃ 80 W TJ Junction Temperature Tstg Storage Temperature 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c ThermalResistance, Junction to Case MAX 1.17 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2SB638 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA ;
IB= 0 -100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A;
INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor.
| Part Number | Description |
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| 2SB630 | Silicon PNP Power Transistor |
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| 2SB632 | PNP Transistor |
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| 2SB634 | PNP Transistor |
| 2SB600 | PNP Transistor |
| 2SB601 | PNP Transistor |
| 2SB604 | PNP Transistor |
| 2SB608 | PNP Transistor |