2SB638 Overview
·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE =1000 (Min) @ IC = -5A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Darlingtion...