2SB638
DESCRIPTION
- Built-in Base-Emitter Shunt Resistors
- High DC current gain- h FE =1000 (Min) @ IC = -5A
- Collector-Emitter Sustaining Voltage-
VCEO(SUS)= -100V(Min)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general purpose amplifier and low frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
VCEO Collector-Emitter Voltage
-100
VEBO IC ICM
Emitter-Base Voltage Collector Current -Continuous Collector Current-Peak
-5
-10
-15
Base Current
-0.2
Collector Power Dissipation@TC=25℃
Junction Temperature
Tstg
Storage...
