Datasheet4U Logo Datasheet4U.com

2SB630 - Silicon PNP Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) Complement to Type 2SD610 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Audio frequency power amplifier applications.

Suitable for driver of 200~300 watts audio amp

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB631 PNP/NPN Epitaxial Planar Silicon Transistor Sanyo Semicon Device
2SB631 SILICON POWER TRANSISTOR SavantIC
2SB631 PNP / NPN Epitaxial Planar Silicon Transistors ON Semiconductor
2SB631K PNP/NPN Epitaxial Planar Silicon Transistor Sanyo Semicon Device
2SB631K SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SB631 PNP Transistor
2SB631K PNP Transistor
2SB632 PNP Transistor
2SB633 PNP Transistor
2SB634 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Power Transistor 2SB630 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·Complement to Type 2SD610 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications. ·Suitable for driver of 200~300 watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3.0 A 1.5 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.