• Part: 2SB633
  • Description: PNP/NPN Epitaxial Planar Silicon Transistor
  • Category: Transistor
  • Manufacturer: SANYO
  • Size: 39.97 KB
Download 2SB633 Datasheet PDF
SANYO
2SB633
Features - High breakdown voltage, VCEO85V, high current 6A. - AF25 to 35W output. Package Dimensions unit:mm 2010C [2SB633/2SD613] ( ) : 2SB633 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Voltage Output Capacitance ICBO IEBO h FE1 h FE2 f T VCE(sat) VBE Cob VCB=(- )40V, IE=0 VEB=(- )4V, IC=0 VCE=(- )5V, IC=(- )1A VCE=(- )5V, IC=(- )3A VCE=(- )5V, IC=(- )1A IC=(- )4A, IB=(- )0.4A IE=(- )5A, IC=(- )1A VCB=(- )10V, f=1MHz JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Ratings (- )100 (- )85 (- )6 (- )6 (-...