2SB638 - PNP Transistor

Inchange Semiconductor

General Description

Built-in Base-Emitter Shunt Resistors High DC current gain- hFE =1000 (Min) @ IC = -5A Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose am

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2SB638 pnp transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SB638
Manufacturer	Inchange Semiconductor
File Size	180.11 KB
Description	PNP Transistor
Datasheet	2SB638 Datasheet

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INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2SB638 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE =1000 (Min) @ IC = -5A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO IC ICM Emitter-Base Voltage Collector Current -Continuous Collector Current-Peak -5 V -10 A -15 A IB Base Current -0.