Datasheet4U Logo Datasheet4U.com

2SB645 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) High Power Dissipation- : PC= 150W(Max)@TC=25℃ Complement to Type 2SD665 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for power amplifier applications.

📥 Download Datasheet

Datasheet preview – 2SB645

Datasheet Details

Part number 2SB645
Manufacturer INCHANGE
File Size 208.70 KB
Description PNP Transistor
Datasheet download datasheet 2SB645 Datasheet
Additional preview pages of the 2SB645 datasheet.

📁 Similar Datasheet

  • 2SB645 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB642 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
  • 2SB643 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
  • 2SB644 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
  • 2SB646 - Silicon PNP Epitaxial Transistor (Hitachi)
  • 2SB646A - Silicon PNP Epitaxial Transistor (Hitachi)
  • 2SB647 - PNP Transistor (Hitachi Semiconductor)
  • 2SB647 - PNP Transistor (Renesas Technology)
  • 2SB647 - PNP Transistor (UTC)
  • 2SB647 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Power Transistors 2SB645 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·High Power Dissipation- : PC= 150W(Max)@TC=25℃ ·Complement to Type 2SD665 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 200W high-fidelity audio frequency amplifier output stage.
Published: |