2SB645 Datasheet | SavantIC

DESCRIPTION - With TO-3 package - High power dissipation APPLICATIONS - For power switching and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -200 -200 -5 -15 -5 150 150 -65~150 UNIT V V V A A W Savant IC Semiconductor .. Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-50m A ;IB=0 IE=-1m A ;IC=0 IC=-10A; IB=-1A VCB=-200V; IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-5V IC=-0.5A ; VCE=-10V 40 12 MIN -200 -5 -3.0 -0.1 -0.1 140 MHz TYP. MAX UNIT V V V m A m A SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO h FE f T h FE Classifications R 40-80 O 70-140 Savant IC Semiconductor .. Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm)...