Datasheet Details
| Part number | 2SB645 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.70 KB |
| Description | PNP Transistor |
| Datasheet | 2SB645-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistors 2SB645.
| Part number | 2SB645 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.70 KB |
| Description | PNP Transistor |
| Datasheet | 2SB645-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·High Power Dissipation- : PC= 150W(Max)@TC=25℃ ·Complement to Type 2SD665 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
·Recommended for 200W high-fidelity audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 15 A 150 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors 2SB645 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB645 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| 2SB612 | PNP Transistor |
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