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2SB668 - PNP Transistor

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Datasheet Details

Part number 2SB668
Manufacturer INCHANGE
File Size 181.09 KB
Description PNP Transistor
Datasheet download datasheet 2SB668-INCHANGE.pdf

2SB668 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) High DC Current Gain : hFE= 2000(Min) @IC= -0.5A Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V

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