Datasheet4U Logo Datasheet4U.com

2SB668 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) High DC Current Gain : hFE= 2000(Min) @IC= -0.5A Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switch

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB668 SILICON POWER TRANSISTOR SavantIC
2SB600 SILICON POWER TRANSISTOR SavantIC
2SB601 PNP Transistor NEC
2SB601 SILICON POWER TRANSISTOR SavantIC
2SB605 PNP SILICON TRANSISTOR NEC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SB669 PNP Transistor
2SB600 PNP Transistor
2SB601 PNP Transistor
2SB604 PNP Transistor
2SB608 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB668 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= -0.