Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -70V(Min)
High DC Current Gain
: hFE= 2000(Min) @IC= -1A
Low Saturation Voltage
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in power amplifier and switching
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isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
2SB669
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -70V(Min) ·High DC Current Gain
: hFE= 2000(Min) @IC= -1A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in power amplifier and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-70
V
VCEO
Collector-Emitter Voltage
-70
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
ICP
Collector Current-Peak
-6
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.
2SB669 Datasheet
