| Part number | 2SB686 |
|---|---|
| Datasheet | 2SB686-INCHANGE.pdf |
| File Size | 215.57 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·plement to Type 2SD716 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Remend for 30~35W high-fidelity audio frequency amplifier output stage. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SB686 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SB686 | SILICON PNP TRANSISTOR | Toshiba |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SB681 | PNP Transistor |
| 2SB682 | PNP Transistor |
| 2SB683 | PNP Transistor |
| 2SB689 | PNP Transistor |
| 2SB600 | PNP Transistor |
| 2SB601 | PNP Transistor |
| 2SB604 | PNP Transistor |
| 2SB608 | PNP Transistor |
| 2SB609 | PNP Transistor |
| 2SB611 | Silicon PNP Power Transistor |
