2SB686
2SB686 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
- Good Linearity of h FE
- plement to Type 2SD716
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Power amplifier applications
- Remend for 30~35W high-fidelity audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
VCEO
Collector-Emitter Voltage
-100
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-6
Collector Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature...
