2SB686 Overview
Description
With TO-3P(I) package - Complement to type 2SD716 APPLICATIONS - Power amplifier applications - Recommend for 30~35W high-fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC IE PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -5 -6 6 60 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ,IB=0 IE=-10mA ,IC=0 IC=-4A; IB=-0.4A IC=-4A ; VCE=-5V VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-1A ; VCE=-5V IE=0 ; VCB=-10V ;f=1MHz 55 MIN -100 -5 2SB686 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE fT Cob TYP. MAX UNIT V V -2.0 -1.5 -10 -10 160 10 270 V V µA µA MHz pF hFE Classifications R 55-110 O 80-160 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB686 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB686 4.
