Inchange Semiconductor 2SB686
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SB686 |
|---|---|
| Datasheet | 2SB686 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min)●Good Linearity of hFE
●Complement to Type 2SD716
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Power amplifier applications●Recommend for 30~35W high-fidelity audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.