Datasheet Details
| Part number | 2SB686 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.57 KB |
| Description | PNP Transistor |
| Datasheet | 2SB686-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB686.
| Part number | 2SB686 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.57 KB |
| Description | PNP Transistor |
| Datasheet | 2SB686-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·Complement to Type 2SD716 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 30~35W high-fidelity audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB686 | SILICON POWER TRANSISTOR | SavantIC |
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2SB686 | SILICON PNP TRANSISTOR | Toshiba |
| Part Number | Description |
|---|---|
| 2SB681 | PNP Transistor |
| 2SB682 | PNP Transistor |
| 2SB683 | PNP Transistor |
| 2SB689 | PNP Transistor |
| 2SB600 | PNP Transistor |
| 2SB601 | PNP Transistor |
| 2SB604 | PNP Transistor |
| 2SB608 | PNP Transistor |
| 2SB609 | PNP Transistor |
| 2SB611 | Silicon PNP Power Transistor |