Datasheet Details
| Part number | 2SB682 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.36 KB |
| Description | PNP Transistor |
| Datasheet | 2SB682-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB682.
| Part number | 2SB682 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.36 KB |
| Description | PNP Transistor |
| Datasheet | 2SB682-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min) ·High Power Dissipation ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 1.5 W 30 150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB682 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA;
| Part Number | Description |
|---|---|
| 2SB681 | PNP Transistor |
| 2SB683 | PNP Transistor |
| 2SB686 | PNP Transistor |
| 2SB689 | PNP Transistor |
| 2SB600 | PNP Transistor |
| 2SB601 | PNP Transistor |
| 2SB604 | PNP Transistor |
| 2SB608 | PNP Transistor |
| 2SB609 | PNP Transistor |
| 2SB611 | Silicon PNP Power Transistor |