2SB688 Overview
Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) - Good Linearity of hFE - Complement to Type 2SD718 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | 2SB688 |
|---|---|
| Description | Silicon PNP Power Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 223.75 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SB688 | Toshiba | Silicon PNP Transistor |
| 2SB688 | Savantic | Silicon PNP Power Transistors |
| 2SB688 | First Silicon | PNP EPITAXIAL SILICON TRANSISTOR |
| 2SB688 | Unisonic Technologies | SILICON PNP TRANSISTORS |
| 2SB688 | JCET | PNP Transistor |