| Part Number | 2SB686 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·Complement to Type 2SD716 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPL.
se Breakdown Voltage
IE= -10mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A
VBE(on)
Base-Emitter On Voltage
IC= -4A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -1A; VCE= -5V
* . |
2SB686 Datasheet and Specifications PDF
The 2SB686 is a PNP Transistor.
Key Specifications
| Part Number | 2SB686 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3P(I) package ·Complement to type 2SD716 APPLICATIONS ·Power amplifier applications ·Recommend for 30~35W high-fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Emitter Collec. Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ,IB=0 IE=-10mA ,IC=0 IC=-4A; IB=-0.4A IC=-4A ; VCE=-5V VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-. |
| Part Number | 2SB686 Datasheet |
|---|---|
| Description | SILICON PNP TRANSISTOR |
| Manufacturer | Toshiba |
| Overview |
:
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
2SB686
POWER AMPLIFIER APPLICATIONS.
15.9MAX.
Unit in mm
03.2±Q .2
FEATURES • Complementary to 2SD716. • Recommended for 30 ^ 35W High-Fidelity Au.
* Complementary to 2SD716. * Recommended for 30 ^ 35W High-Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage Collector Current 'EBO ic Emitter Current Collector Po. |