Download 2SB705B Datasheet PDF
Inchange Semiconductor
2SB705B
2SB705B is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) - plement to Type 2SD745B - High Power Dissipation - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Suitable for output stages of 60~120 watts audio amplifier and voltage regulations. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 VCEO Collector-Emitter Voltage -160 VEBO Emitter-Base Voltage -5 Collector Current-Continuous -10 Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature -15 ℃ Tstg Storage Temperature...