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2SB705A - Power Transistor

General Description

Collector-Emitter Breakdown Voltage: V(BR)CEO= -140V(Min) Complement to Type 2SD745 High Power Dissipation APPLICATIONS For audio frequency power amplifier applications

Suitable for output stages of 60~120 watts audio amplifier and voltage regulations.

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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB705 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -140V(Min) ·Complement to Type 2SD745 ·High Power Dissipation APPLICATIONS ·For audio frequency power amplifier applications ·Suitable for output stages of 60~120 watts audio amplifier and voltage regulations. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i . w VALUE UNIT -140 V -140 V -5 V -10 A -15 A 120 W n c . i m e IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature PC TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ www.DataSheet4U.