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2SB705B - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) Complement to Type 2SD745B High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suitable for output stages of 60~120 watts audio amplifier and voltag

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isc Silicon PNP Power Transistor 2SB705B DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Complement to Type 2SD745B ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Suitable for output stages of 60~120 watts audio amplifier and voltage regulations. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.