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2SB703 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) DC Current Gain- : hFE= 40~200 @IC= -0.5A Complement to Type 2SD743 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio frequency power amplifier

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isc Silicon PNP Power Transistor 2SB703 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·DC Current Gain- : hFE= 40~200 @IC= -0.5A ·Complement to Type 2SD743 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio frequency power amplifier, low speed switching applications.