2SB703
2SB703 is SILICON POWER TRANSISTOR manufactured by SavantIC.
DESCRIPTION
- With TO-220C package
- plement to type 2SD743
- High power dissipation APPLICATIONS
- Designed for use in audio frequency power amplifier,low speed switching applications
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -5 -4 -6 -1 40 150 -55~150 UNIT V V V A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 3.125 UNIT /W
Savant IC Semiconductor
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Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10m A; IB=0 IC=-1.0m A; IE=0 IE=-1.0m A; IC=0 IC=-3A;IB=-0.3A IC=-3A;IB=-0.3A VCB=-80V; IE=0 VEB=-3V; IC=0 IC=-20m A ; VCE=-5V IC=-500m A ; VCE=-5V IC=-100m A ; VCE=-5V,f=1MHz 30 40 10 MIN -80 -80 -5
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO h FE-1 h FE-2 f T
TYP.
UNIT V V V
-2.0 -2.0 -10 -10
V V µA µA
200 MHz h FE-2 Classifications S 40-80 R 60-120 Q 100-200
Savant IC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10...