2SB709A - Silicon PNP epitaxial planar type Transistor
Panasonic
Key Features
q q
0.65±0.15
+0.25 1.5.
0.05
0.65±0.15
0.95
1.1.
0.1
+0.2
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO ICP IC PC Tj Tstg.
45.
45.
7.
200.
100 200 150.
55 ~ +150
V V V mA mA mW ˚C ˚C
1:Base 2:Emitter 3:Collector
JEDEC:TO.
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Transistor
2SB709A
Silicon PNP epitaxial planer type
For general amplification Complementary to 2SD601A
2.8 –0.3
+0.2
Unit: mm
s Features
q q
0.65±0.15
+0.25 1.5 –0.05
0.65±0.15
0.95
1.1 –0.1
+0.
2SB709A Datasheet
