2SB709A Datasheet and Specifications PDF

Transistor 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD601A 2.8 –0.3 +0.2 Unit: mm s Features q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 0.95 1.1 –0.1 .

q q 0.65±0.15 +0.25 1.5
*0.05 0.65±0.15 0.95 1.1
*0.1 +0.2 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO ICP IC PC Tj Tstg
*45
*45
*7.

2SB709A(3CG709A) PNP /SILICON PNP TRANSISTOR :/Purpose: General power amplifier applications. : 2SD601A(3DG601A)/Features:Complementary pair with 2SD601A(3DG601A). /Absolute maximum ratings(Ta=25℃.

Complementary pair with 2SD601A(3DG601A). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -45 V VCEO -45 V VEBO -7.0 V IC -100 mA ICP -200 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob.

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * Power dissipation PCM : 0.2 W(Tamb=25OC) 2SB709A MECHANICAL DATA * Case: Molded plastic * Epo.

* Power dissipation PCM : 0.2 W(Tamb=25OC) 2SB709A MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25OC ambient tem.

Production specification Silicon Epitaxial Planar Transistor FEATURES  High forward current transfer ratio hFE.  Mini type package, allowing downsizing Pb Lead-free of the equipment and automati.

* High forward current transfer ratio hFE.
* Mini type package, allowing downsizing Pb Lead-free of the equipment and automatic insertion through the tape packing and the magazine packing. 2SB709A APPLICATIONS
* For general amplification complementary to 2SD601A. ORDERING INFORMATION Type No.