Datasheet Details
| Part number | 2SB707 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.91 KB |
| Description | PNP Transistor |
| Datasheet | 2SB707-INCHANGE.pdf |
|
|
Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB707 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.91 KB |
| Description | PNP Transistor |
| Datasheet | 2SB707-INCHANGE.pdf |
|
|
|
·High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -5A ·Complement to Type 2SD568 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplifiers and low-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -7 A IB Base Current-Continuous Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature -3.5 A 40 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB707 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB707 | (2SB707 / 2SB708) SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB703 | PNP Transistor |
| 2SB705 | PNP Transistor |
| 2SB705B | PNP Transistor |
| 2SB708 | PNP Transistor |
| 2SB713 | PNP Transistor |
| 2SB719 | PNP Transistor |
| 2SB720 | PNP Transistor |
| 2SB722 | PNP Transistor |
| 2SB723 | PNP Transistor |
| 2SB724 | PNP Transistor |