High Collector Current:: IC= -7A
Low Collector Saturation Voltage
: VCE(sat)= -0.5V(Max)@IC= -5A
Complement to Type 2SD569
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low-frequency power amplifiers and low-spee
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isc Silicon PNP Power Transistor
2SB708
DESCRIPTION ·High Collector Current:: IC= -7A ·Low Collector Saturation Voltage
: VCE(sat)= -0.5V(Max)@IC= -5A ·Complement to Type 2SD569 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low-frequency power amplifiers and low-speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-7
A
ICM
Collector Current-Peak
-15
A
IB
Base Current-Continuous
Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃
TJ
Junction Temperature
-3.
2SB708 Datasheet
