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2SB743 - PNP Transistor

General Description

Collector-Emitter BreakdownVoltage- : V(BR)CEO= -30V(Min.) Low Collector to Emitter Saturation Voltage : VCE(sat)= -2.0V(Max.)@IC= -1.5A Excellent hFE linearity Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audi

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB743 DESCRIPTION ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -30V(Min.) ·Low Collector to Emitter Saturation Voltage : VCE(sat)= -2.0V(Max.)@IC= -1.5A ·Excellent hFE linearity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and general purpose applications.