2SB765 - PNP Transistor

Description

High DC Current Gain- : hFE = 1000(Min)@ IC= -1.5A Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -1.5A Complement to Type 2SD864 Minimum Lot-to-Lot variations for robust device performance

Inchange Semiconductor

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Datasheet Details

Part number	2SB765
Manufacturer	Inchange Semiconductor
File Size	210.43 KB
Description	PNP Transistor
Datasheet	2SB765 Datasheet
Additional preview pages of the 2SB765 datasheet.

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isc Silicon PNP Darlington Power Transistor 2SB765 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -1.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -1.5A ·Complement to Type 2SD864 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium speed and power switching applications.

Published: Sep 17, 2020 |