2SB765K Datasheet | SavantIC

DESCRIPTION - With TO-220C package - DARLINGTON - High DC current gain - plement to type 2SD864K APPLICATIONS - For medium speed and power switching Applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -7 -3 -6 30 150 -55~150 UNIT V V V A A W Savant IC Semiconductor .. Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=-25m A, RBE=? IE=-50m A ,IC=0 IC=-1.5A ,IB=-3m A IC=-3A ,IB=-30m A IC=-1.5A ,IB=-3m A IC=-3A ,IB=-30m A VCB=-120V, IE=0 VCE=-100V; RBE=? IC=-1.5A ; VCE=-3V 1000 MIN -120 -7 SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO h FE TYP. UNIT V V -1.5 -3.0 -2.0 -3.5 -100 -10 20000 V V V V µA µA Switching times ton tstg tf Turn-on time Storage time Fall time IC=-1.5A ;IB1=-IB2=-3m A 0.8 3.0 1.5 µs µs µs Savant IC Semiconductor .. Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline...