2SB765
2SB765 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High DC Current Gain-
: h FE = 1000(Min)@ IC= -1.5A
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -120V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ IC= -1.5A
- plement to Type 2SD864
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Medium speed and power switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-120
VCEO
Collector-Emitter Voltage
-120
VEBO
Emitter-Base Voltage
-7
Collector Current-Continuous
-3
Collector Current-Peak
Collector Power Dissipation TC=25℃
Tj
Junction Temperature
-6
℃...
